Title :
High responsivity and low dark current operation of ultra-small InGaAs MSM photodetector integrated on Si waveguide
Author :
Ohira, Kazuya ; Kobayashi, Kentaro ; Iizuka, Norio ; Yoshida, Haruhiko ; Suzuki, Takashi ; Suzuki, Nobuo ; Ezaki, Mizunori
Author_Institution :
Corp. R&D Center, Toshiba Corp., Kawasaki, Japan
Abstract :
We demonstrated a small footprint of 2 × 10 μm2 InGaAs MSM photodetector integrated on Si waveguide with high-efficiency and low dark current property. The detectors have responsivities of 0.94 A/W and the dark current of less than 20 nA, and are capable of 10 Gbps data rate.
Keywords :
III-V semiconductors; dark conductivity; elemental semiconductors; gallium arsenide; indium compounds; integrated optics; metal-semiconductor-metal structures; optical waveguides; photodetectors; silicon; InGaAs; Si; high-efficiency property; low dark current operation; optical waveguide; photodetector responsivity; ultrasmall MSM photodetector; Absorption; Detectors; Electrodes; Indium gallium arsenide; Optical device fabrication; Optical waveguides; Silicon;
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
DOI :
10.1109/GROUP4.2010.5643339
