Title :
Optimization of Interface Properties in a-Si:H/c-Si Heterojunction Solar Cells
Author :
Conrad, E. ; Maydell, K.V. ; Angermann, H. ; Schubert, C. ; Schmidt, M.
Author_Institution :
Hahn-Meitner-Inst. Berlin
Abstract :
We report on the optimization of hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) heterojunction solar cells which were completely processed at temperatures below 230degC. Efficient solar cells based on both n-type and on p-type c-Si substrates were performed. In contrast to the approach from Sanyo no additional a-Si:H(i) buffer layer was used. Instead the conditions of the amorphous silicon preparation by conventional plasma enhanced chemical vapor deposition (PECVD) were optimized and several wet- or plasma chemical treatments were applied to improve the interface properties. The highest efficiencies so far are 17.4 % on p-type c-Si wafers and 19.8 % on n-type c-Si wafers
Keywords :
amorphous semiconductors; buffer layers; elemental semiconductors; hydrogen; passivation; plasma CVD; semiconductor heterojunctions; silicon; solar cells; 17.4 percent; 19.8 percent; PECVD; Si; Si:H-Si; amorphous silicon; buffer layer; hydrogenated amorphous silicon-crystalline silicon heterojunction solar cells; interface properties; n-type crystalline silicon substrates; n-type crystalline silicon wafers; p-type crystalline silicon substrates; p-type crystalline silicon wafers; plasma chemical treatments; plasma enhanced chemical vapor deposition; semiconductor heterojunction solar cells; surface passivation; wet-chemical treatments; Amorphous silicon; Chemical vapor deposition; Crystallization; Heterojunctions; Photovoltaic cells; Plasma applications; Plasma chemistry; Plasma properties; Plasma temperature; Surface cleaning;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279643
