Precise Performance Measurement of High-Efficiency Crystalline Silicon Solar Cells

Author

Hishikawa, Yoshihiro

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki

Volume

2

fYear

2006

fDate

38838

Firstpage

1279

Lastpage

1282

Abstract

The effect of the sweep speed and direction on the I-V measurement of state-of-the-art high-efficiency c-Si cells and modules such as HIT and backside-contact technologies is investigated, in order to clarify the precise characterization techniques for those devices. The P_max and FF of these devices with conversion efficiencies of ~20% show significant dependence on the sweep conditions by 5-10% or more, when the sweep speed is less than 50-100 msec. Their I-V measurements should be carried out in the conditions where the result is independent on both the sweep direction and speed

Keywords

electrical conductivity; elemental semiconductors; silicon; solar cells; I-V measurement; Si; backside-contact technologies; crystalline silicon solar cells; heterojunction intrinsic thin film; Capacitance; Crystallization; Current measurement; Electronic equipment testing; Mass production; Photovoltaic cells; Pulse measurements; Silicon; Temperature control; Velocity measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279647

Filename

4059877