• DocumentCode
    3202923
  • Title

    A 5-GHz, variable gain, SiGe low noise amplifier

  • Author

    Plessas, F. ; Kalivas, G.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Patras Univ., Rion, Greece
  • Volume
    2
  • fYear
    2004
  • fDate
    16-19 May 2004
  • Firstpage
    609
  • Abstract
    A bipolar low noise amplifier (LNA) is described in this work. The IC contains the LNA core, an externally programmed bias network, a voltage divider, an LC tank and inductors to set the input impedance. The externally programmed bias network allows the user to select the bias current in an adaptive manner, depending upon the requirements of the individual system. (Low NF, high gain, low consumption etc). The chip can be powered down by sending an appropriate bit stream to the bias network. The tuned amplifier using a parallel LC network provides selective amplification and lower power consumption. The produced gain is 15 dB while the NF is 2.1 dB for moderate power consumption. The IIP3 is -7 dB and the P1dB is -17 dB. The power consumption from a single 5-V supply is 3.4 mA for the low gain mode and 13 mA for the high gain mode.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; bipolar integrated circuits; radiofrequency amplifiers; semiconductor device noise; wireless LAN; 13 mA; 15 dB; 3.4 mA; 5 GHz; 5 V; 5-GHz variable gain amplifier; LC tank; SiGe; SiGe low noise amplifier; adaptive manner; bias network; bipolar low noise amplifier; externally programmed bias network; input impedance; lower power consumption; selective amplification; tuned amplifier; voltage divider; Energy consumption; Gain; Germanium silicon alloys; Impedance; Inductors; Integrated circuit noise; Low-noise amplifiers; Noise measurement; Silicon germanium; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2004. 24th International Conference on
  • Print_ISBN
    0-7803-8166-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.2004.1314901
  • Filename
    1314901