A novel high gain and low noise figure CMOS mixer with fully integrated esd protection

Author

Salmeh, Roghoyeh

Author_Institution

ATCO Electr., Canada

fYear

2012

fDate

5-8 Aug. 2012

Firstpage

41

Lastpage

44

Abstract

A creative method to reduce the voltage head room requirement in the design of double balanced mixer is introduced. Design of a novel high gain, low noise figure and low power CMOS mixer with fully integrated ESD protection is presented. The mixer was implemented in ST 90nm CMOS technology and was packed in a QFN package. With an operating frequency of 1.575 GHz this mixer was targeted for GPS front-end receiver application.

Keywords

CMOS integrated circuits; Global Positioning System; electrostatic discharge; mixers (circuits); GPS front-end receiver application; QFN package; frequency 1.575 GHz; full integrated ESD protection; high gain CMOS mixer; low noise figure CMOS mixer; low power CMOS mixer; size 90 nm; voltage head room requirement reduction; CMOS integrated circuits; Computer architecture; Mixers; Noise figure; Radio frequency; Receivers; Transistors; ESD protection; Impedance Matching; Linearity; Mixer Gain and Noise figure; RF Mixer;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (MWSCAS), 2012 IEEE 55th International Midwest Symposium on

Conference_Location

Boise, ID

ISSN

1548-3746

Print_ISBN

978-1-4673-2526-4

Electronic_ISBN

1548-3746

Type

conf

DOI

10.1109/MWSCAS.2012.6291952

Filename

6291952