A rigorous study of wire-bonding and via-hole effects on GaAs field effect transistors

A new procedure is presented for evaluation of the wire-bonding and via-hole effects on a GaAs FET at microwave frequencies. The analysis not only provides a rigorous characterization of the passive elements, like bond-wires, via-holes and microstrips, on a GaAs FET but also includes their mutual coupling with the active region. For practical applications, the corresponding gate, source and drain inductances, which are the important extrinsic parameters of a CAD oriented equivalent circuit model, are extracted based on the calculated S-parameters.<>