Effect of HF Treatment on Hydrogenated Silicon Nitride Anti-reflection Films Quality and Optical Properties

Author

Jeon, M.S. ; Dhamrin, M. ; Saitoh, T. ; Kamisako, K.

Author_Institution

Tokyo Univ. of Agric. & Technol.

Volume

2

fYear

2006

fDate

38838

Firstpage

1425

Lastpage

1428

Abstract

The effect of diluted hydrofluoric (HF) acid treatment on the refractive index, etch rate and chemical composition of hydrogenated silicon nitride (SiN_x:H) films is investigated. The hydrogenated silicon nitride (SiN_x:H) films are deposited using the direct plasma enhanced chemical vapor deposition (PECVD) on n ⁺p crystalline silicon solar cells before contact screen-printing process. In order to study the optical properties and chemical composition of formed SiN_x:H layers, the reflectance and FT-IR spectra are used. Moreover, the printed contact on the deposited SiN_x:H films and its cross section are observed by the scanning electron microscopy (SEM) after firing with different firing durations in quartz tube furnace

Keywords

Fourier transform spectra; antireflection coatings; infrared spectra; plasma CVD; plasma materials processing; refractive index; scanning electron microscopy; silicon compounds; solar cells; thin films; FTIR spectra; Fourier transform infrared spectra; PECVD; SEM; SiN_x:H; chemical composition; crystalline silicon solar cells; diluted hydrofluoric acid treatment; direct plasma enhanced chemical vapor deposition; etch rate; hydrogenated silicon nitride antireflection films; optical properties; quartz tube furnace; reflectance; refractive index; scanning electron microscopy; screen-printing process; Chemicals; Etching; Hafnium; Optical films; Optical refraction; Optical variables control; Refractive index; Scanning electron microscopy; Semiconductor films; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279720

Filename

4059915