Title :
Study on Ge content of intermediate layer in growing relaxed Ge films on Si
Author :
Huangfu, Yourui ; Ye, Hui
Author_Institution :
State Key Lab. of Modern Opt. Instrum., Zhejiang Univ., Hangzhou, China
Abstract :
The growth of relaxed Ge films was carried out in MBE equipment. We focused on the influence of Ge content of intermediate layer between LT and HT Ge films and achieved Ge film with threading dislocation density of 5×105 cm-2 and surface roughness of 1.5nm.
Keywords :
dislocation density; elemental semiconductors; germanium; molecular beam epitaxial growth; semiconductor growth; semiconductor thin films; surface roughness; Ge; MBE equipment; Si; dislocation density; intermediate layer; relaxed films; silicon substrate; surface roughness; Films; Lattices; Physics; Rough surfaces; Silicon; Surface morphology; Surface roughness;
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
DOI :
10.1109/GROUP4.2010.5643401
