• DocumentCode
    3203813
  • Title

    Study on Ge content of intermediate layer in growing relaxed Ge films on Si

  • Author

    Huangfu, Yourui ; Ye, Hui

  • Author_Institution
    State Key Lab. of Modern Opt. Instrum., Zhejiang Univ., Hangzhou, China
  • fYear
    2010
  • fDate
    1-3 Sept. 2010
  • Firstpage
    141
  • Lastpage
    143
  • Abstract
    The growth of relaxed Ge films was carried out in MBE equipment. We focused on the influence of Ge content of intermediate layer between LT and HT Ge films and achieved Ge film with threading dislocation density of 5×105 cm-2 and surface roughness of 1.5nm.
  • Keywords
    dislocation density; elemental semiconductors; germanium; molecular beam epitaxial growth; semiconductor growth; semiconductor thin films; surface roughness; Ge; MBE equipment; Si; dislocation density; intermediate layer; relaxed films; silicon substrate; surface roughness; Films; Lattices; Physics; Rough surfaces; Silicon; Surface morphology; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2010 7th IEEE International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-6344-2
  • Type

    conf

  • DOI
    10.1109/GROUP4.2010.5643401
  • Filename
    5643401
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3203813