• DocumentCode
    3203890
  • Title

    Surface plasmon enhanced electroluminescence of SiNx film based MIS device

  • Author

    Ren, Changrui ; Li, Dongsheng ; Jin, Lu ; Xiang, Lue Lue ; Yang, Deren

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Zhejiang Univ., Hangzhou, China
  • fYear
    2010
  • fDate
    1-3 Sept. 2010
  • Firstpage
    129
  • Lastpage
    131
  • Abstract
    Electroluminescence of MIS devices consisted with an ITO/SiO2/SiNx/Ag/p-Si/Al multilayer structure, as well as the multilayer without Ag, was investigated. The enhancement of EL intensity of MIS devices by introduce an Ag islands film was observed. Due to the existence of Ag islands film in the MIS devices of SiNx films, the injected current of MIS devices was increased and the extracted EL was also enhanced by the excitons-LSPs coupling.
  • Keywords
    MIS devices; aluminium; electroluminescence; excitons; indium compounds; semiconductor thin films; silicon compounds; silver; surface plasmons; tin compounds; Ag islands film; ITO-SiO2-SiNx-Ag-Si-Al; MIS device; electroluminescence; excitons-LSP coupling; multilayer structure; surface plasmon; thin films; Couplings; Films; Light emitting diodes; MIS devices; Periodic structures; Physics; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2010 7th IEEE International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-6344-2
  • Type

    conf

  • DOI
    10.1109/GROUP4.2010.5643405
  • Filename
    5643405
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3203890