A floating-gate memory cell for continuous-time programming

As an apt choice for long-term analog memory in standard CMOS processes, floating-gate transistors are key enablers for large-scale programmable analog systems. Such systems are often designed for battery-powered-and generally resource-constrained-applications, which require the memory cells to program quickly with low infrastructural overhead. In order to meet these needs, we present a new analog floating-gate memory cell. Our four-transistor memory cell offers both voltage and current outputs and has linear injection and tunneling characteristics. Furthermore, we present a simple programming circuit that forces the memory cell to converge to voltage targets within 100ms and with 8-bit accuracy.