DocumentCode :
3203943
Title :
Enhanced electroluminescence from nc-Si/SiO2 pillar arrays using nanosphere lithography
Author :
Ma, Z.Y. ; Liu, G.Y. ; Xia, G.Y. ; Yan, M.Y. ; Jiang, X.F. ; Ling, T. ; Xu, L. ; Dong, H.P. ; Huang, X.F. ; Chen, K.J. ; Li, W. ; Feng, D.
Author_Institution :
Dept. of Phys., Nanjing Univ., Nanjing, China
fYear :
2010
fDate :
1-3 Sept. 2010
Firstpage :
114
Lastpage :
116
Abstract :
Intensive electroluminescence could be observed from nc-Si/SiO2 pillars. The electroluminescence intensity is increased by 30 times of magnitude compared to that of nc-Si/SiO2 multilayers. The enhancement of EL can be attributed to the improved extraction efficiency of emission light and the high carrier-injection efficiency.
Keywords :
electroluminescence; nanofabrication; nanolithography; nanophotonics; optical arrays; optical fabrication; optical multilayers; silicon; silicon compounds; Si-SiO2; electroluminescence intensity; high carrier-injection efficiency; light emission; multilayers; nanosphere lithography; nc-Si-SiO2 pillar arrays; Electroluminescence; Lithography; Morphology; Nanostructures; Nonhomogeneous media; Silicon; Surface morphology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
Type :
conf
DOI :
10.1109/GROUP4.2010.5643408
Filename :
5643408
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3203943
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