Title :
16.6% efficient Silicon-FilmTM polycrystalline silicon solar cells
Author :
Bai, Yibin ; Ford, David H. ; Rand, James A. ; Hall, Robert B. ; Barnett, Allen M.
Author_Institution :
AstroPower Inc., Newark, DE, USA
fDate :
29 Sep-3 Oct 1997
Abstract :
A 16.6% efficient Silicon-FilmTM solar cell has been demonstrated and verified on a one-square-centimeter device. This result was achieved with an improved blue response using an optimized low-temperature PECVD oxide passivation and reduced optical losses by the reduction of grid obscuration and front reflectance. Ongoing efforts have been centered on the material growth to better control grown-in impurities and defects, post-growth material enhancements to effectively remove impurities and passivate bulk defects, and device optimisations to further reduce device optical and electrical losses. Model calculations indicate that an efficiency over 18% is achievable if further optimizations in antireflection coating and improvements in minority carrier diffusion length can be effected
Keywords :
elemental semiconductors; optical losses; passivation; plasma CVD coatings; reflectivity; semiconductor thin films; silicon; solar cells; 16.6 percent; Si; Si solar cells; Silicon-Film silicon solar cells; antireflection coating; blue response; bulk defects passivation; defects control; electrical losses reduction; front reflectance; grid obscuration reduction; grown-in impurities control; material growth; minority carrier diffusion length; optical losses reduction; optimized low-temperature PECVD oxide passivation; polycrystalline silicon solar cells; post-growth material enhancements; reduced optical losses; Diodes; Doping; Hydrogen; Optical surface waves; Passivation; Photovoltaic cells; Plasma applications; Plasma measurements; Silicon; Surface treatment;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.653918