DocumentCode
3204036
Title
Free charge carrier induced refractive index modulation of crystalline silicon
Author
Singh, Aashish
Author_Institution
Dept. of Electr. & Comput. Syst. Eng., Monash Univ., Clayton, VIC, Australia
fYear
2010
fDate
1-3 Sept. 2010
Firstpage
102
Lastpage
104
Abstract
New relationships for the free carrier induced refractive index modulation of crystalline silicon at 1.3 and 1.55 μm are derived. Free electrons are more effective in perturbing the refractive index compared to free holes.
Keywords
elemental semiconductors; refractive index; silicon; Si; crystalline silicon; free charge carrier induced refractive index modulation; free electrons; Absorption; Charge carrier processes; Doping; Refractive index; Scattering; Semiconductor process modeling; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-6344-2
Type
conf
DOI
10.1109/GROUP4.2010.5643412
Filename
5643412
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