• DocumentCode
    320406
  • Title

    Progress on the LOPE (local point contact and shallow angle evaporation) silicon solar cell

  • Author

    Terheiden, B. ; Kuhn, R. ; Zechner, C. ; Fath, P. ; Willeke, G. ; Bucher, E.

  • Author_Institution
    Fakultat fur Phys., Konstanz Univ., Germany
  • fYear
    1997
  • fDate
    29 Sep-3 Oct 1997
  • Firstpage
    239
  • Lastpage
    242
  • Abstract
    The LOPE-Solar cell concept is based on a V-textured front surface with local point contacts which are interconnected by the SAFE (shallow angle finger evaporation) technique after a heavy phosphorus diffusion. Three dimensional computer simulations were carried out to examine the influence of the point contact distance parallel and perpendicular to the V-grooves. Additionally two different emitters, two different sheet resistances under the metal contact and a small and a larger contact area were investigated. A plating sequence for Ni-plating has been successfully implemented in the LOPE-cell process to complete the metallisation of the local openings. A detailed characterisation of the LOPE-cell is presented
  • Keywords
    chemical vapour deposition; digital simulation; electroplated coatings; elemental semiconductors; nickel; phosphorus; point contacts; power engineering computing; semiconductor device metallisation; silicon; solar cells; LOPE-Solar cell concept; Ni-plating; Si:P; V-textured front surface; contact area; emitters; heavy phosphorus diffusion; local openings; local point contacts; metal contact; metallisation; parallel point contact distance; perpendicular point contact distance; plating sequence; shallow angle finger evaporation technique; sheet resistances; three dimensional computer simulations; Artificial intelligence; Computer simulation; Etching; Fingers; Lithography; Metallization; Photovoltaic cells; Physics; Scanning electron microscopy; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
  • Conference_Location
    Anaheim, CA
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-3767-0
  • Type

    conf

  • DOI
    10.1109/PVSC.1997.654073
  • Filename
    654073