DocumentCode
320514
Title
A quasi two-dimensional analytical model for threshold voltage of a modulation doped field effect transistor
Author
Sen, Sujata ; Pandey, Manoj K. ; Khann, Manoj ; Gupta, R.S.
Author_Institution
Dept. of Electron. Sci., Delhi Univ., India
fYear
1997
fDate
2-5 Dec 1997
Firstpage
705
Abstract
A two-dimensional analytical model for the threshold voltage of a subquarter-micrometer-gate Modulation Doped Field Effect Transistor (MODFET) is reported. The threshold voltage variation is obtained in terms of different device parameters. A very small shift in threshold voltage was observed supporting that the model suffers less from severe short channel effects. The model agrees well with the experimental data
Keywords
high electron mobility transistors; microwave field effect transistors; semiconductor device models; 0.25 micron; HEMT; MODFET; device parameters; field effect transistor; modulation doped FET; quasi 2D analytical model; short channel effects; subquarter-micrometer-gate; threshold voltage; two-dimensional analytical model; Analytical models; Epitaxial layers; FETs; HEMTs; MODFET circuits; MODFET integrated circuits; Photonic band gap; Poisson equations; Semiconductor process modeling; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings, 1997. APMC '97, 1997 Asia-Pacific
Print_ISBN
962-442-117-X
Type
conf
DOI
10.1109/APMC.1997.654639
Filename
654639
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