Title :
A process and temperature invariant on-chip resistor and its application
Author :
Anvesha, A. ; Dave, Marshnil ; Baghini, Maryam Shojaei ; Sharma, Dinesh
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol.(IIT)-Bombay, Mumbai, India
Abstract :
This paper presents a novel bias circuit for achieving process and temperature invariant resistor using a MOSFET operating in triode region. The proposed circuit comprises of an enhanced process tracking circuit and complementary to absolute temperature (CTAT) voltage generators. The proposed circuit has been designed and optimized in 180nm mixed-mode CMOS technology. Exhaustive Montecarlo simulations show that the ON resistance of the MOSFET (RON) varies only by ± 7.6% with process and ± 1.2% with temperature ranging from 0°C to 100°C. The proposed bias circuit reduces variation in RON by a factor of 3.4 as compared to a fixed bias MOSFET. The proposed circuit consumes 130μW power.
Keywords :
CMOS integrated circuits; MOSFET; Monte Carlo methods; integrated circuit design; mixed analogue-digital integrated circuits; resistors; triodes; MOSFET; ON resistance; bias circuit; circuit design; complementary to absolute temperature voltage generator; exhaustive Monte Carlo simulation; mixed-mode CMOS technology; power 130 muW; process tracking circuit; size 180 nm; temperature 0 C to 100 C; temperature invariant on-chip resistor; triode region; CMOS integrated circuits; MOSFETs; Resistance; Resistors; System-on-a-chip; Threshold voltage;
Conference_Titel :
Circuits and Systems (MWSCAS), 2012 IEEE 55th International Midwest Symposium on
Conference_Location :
Boise, ID
Print_ISBN :
978-1-4673-2526-4
Electronic_ISBN :
1548-3746
DOI :
10.1109/MWSCAS.2012.6292118