Title :
Effect of nonparabolicity on Quantum Well laser of low band gap semiconductors
Author :
Bhattacharyya, Souvik ; Dey, Anamika ; Maiti, Bikas
Author_Institution :
Dept. of ECE, Budge Budge Inst. of Technol., Kolkata, India
Abstract :
Three energy band model of Kane has been used to develop a general theory of optical gain for Quantum Well (QW) laser of low band gap semiconductors. Wave vector equation dependence on optical matrix element (OME) has been incorporated in determining the laser gain for these semiconductors having nonparabolic energy band profile. The effect of nonparabolicity is seen to increase the monochromaticity of laser. Intraband scattering and auger recombination present in the system have been found to play a major role in shifting the gain peak towards shorter wavelength, reduce line width and decrease the peak gain.
Keywords :
Auger effect; energy gap; laser beams; laser theory; quantum well lasers; QW laser; auger recombination; energy band model; intraband scattering; laser gain; laser monochromaticity; low band gap semiconductors; nonparabolic energy band profile; optical gain; optical matrix element; quantum well laser; wave vector dependence; Laser modes; Laser theory; Optical scattering; Photonic band gap; Quantum well lasers; Radiative recombination; Auger Recombination; Interband Scattering; Intraband Scattering; Kane Model; Nonparabolic Band; Optical Gain; Optical Matrix Element; Quantum Well Laser;
Conference_Titel :
Microwave and Photonics (ICMAP), 2013 International Conference on
Conference_Location :
Dhanbad
Print_ISBN :
978-1-4799-2176-8
DOI :
10.1109/ICMAP.2013.6733519
