DocumentCode
3207944
Title
Ultra low noise microwave oscillators with low residual flicker noise
Author
Everard, J.K.A. ; Page-Jones, M.
Author_Institution
Dept. of Electron., York Univ., UK
fYear
1995
fDate
16-20 May 1995
Firstpage
693
Abstract
This paper describes the design of two low noise microwave oscillators operating at 7.6 GHz. These oscillators use room temperature sapphire resonators operating in the TE/sub 01//spl delta/ mode which demonstrate unloaded Q´s of 44,000. Silicon transposed gain amplifiers are used to produce low flicker noise corners of 1 to 2 kHz and a phase noise of -131 dBc at 10 kHz offset. Further improvements of 30 dB are expected using this technique.<>
Keywords
circuit noise; flicker noise; microwave oscillators; phase noise; resonators; sapphire; 7.6 GHz; SHF; Si; Si transposed gain amplifiers; TE/sub 01//spl delta/ mode operation; microwave oscillators; phase noise; residual flicker noise; room temperature sapphire resonators; ultra low noise oscillators; 1f noise; Acoustical engineering; Frequency; Gallium arsenide; Local oscillators; Low-frequency noise; Low-noise amplifiers; Microwave oscillators; Phase noise; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location
Orlando, FL, USA
ISSN
0149-645X
Print_ISBN
0-7803-2581-8
Type
conf
DOI
10.1109/MWSYM.1995.406013
Filename
406013
Link To Document