• DocumentCode
    3209767
  • Title

    Quantum interference depression in thin metal films with ridged surface

  • Author

    Tavkhelidze, Avto ; Svanidze, Vasiko ; Noselidze, Irakli

  • Author_Institution
    Tbilisi State Univ., Tbilisi
  • fYear
    2007
  • fDate
    8-12 July 2007
  • Firstpage
    46
  • Lastpage
    47
  • Abstract
    We discuss what happens when low dimensional regular indents are fabricated on the surface of a thin metal film. Using corresponding theoretical methods, we study the free electron inside a potential-energy box with ridged wall and compare the results to the case with plane walls. It was shown that, ridged geometry of the wall leads to Quantum Interference Depression (QID), or reduction of the density of quantum states for the electron. Results obtained for the potential-energy box were extrapolated to the low-dimensional metals (thin metal films). QID leads to increase of the Fermi level and corresponding reduction of the work function. Experimental possibility of fabricating such indents on the surface of a thin metal film was studied.
  • Keywords
    Fermi level; metallic thin films; quantum interference phenomena; work function; Fermi level; free electron; low-dimensional metals; potential energy box; quantum interference depression; quantum states; ridged geometry; ridged surface; thin metal films; work function; Electrons; Geometry; Interference; Nanoelectronics; Resonant tunneling devices; Schrodinger equation; Shape; Strips; Surface waves; Wave functions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
  • Conference_Location
    Chicago, IL
  • Print_ISBN
    978-1-4244-1133-7
  • Electronic_ISBN
    978-1-4244-1134-4
  • Type

    conf

  • DOI
    10.1109/IVNC.2007.4480925
  • Filename
    4480925