DocumentCode
3209767
Title
Quantum interference depression in thin metal films with ridged surface
Author
Tavkhelidze, Avto ; Svanidze, Vasiko ; Noselidze, Irakli
Author_Institution
Tbilisi State Univ., Tbilisi
fYear
2007
fDate
8-12 July 2007
Firstpage
46
Lastpage
47
Abstract
We discuss what happens when low dimensional regular indents are fabricated on the surface of a thin metal film. Using corresponding theoretical methods, we study the free electron inside a potential-energy box with ridged wall and compare the results to the case with plane walls. It was shown that, ridged geometry of the wall leads to Quantum Interference Depression (QID), or reduction of the density of quantum states for the electron. Results obtained for the potential-energy box were extrapolated to the low-dimensional metals (thin metal films). QID leads to increase of the Fermi level and corresponding reduction of the work function. Experimental possibility of fabricating such indents on the surface of a thin metal film was studied.
Keywords
Fermi level; metallic thin films; quantum interference phenomena; work function; Fermi level; free electron; low-dimensional metals; potential energy box; quantum interference depression; quantum states; ridged geometry; ridged surface; thin metal films; work function; Electrons; Geometry; Interference; Nanoelectronics; Resonant tunneling devices; Schrodinger equation; Shape; Strips; Surface waves; Wave functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
Conference_Location
Chicago, IL
Print_ISBN
978-1-4244-1133-7
Electronic_ISBN
978-1-4244-1134-4
Type
conf
DOI
10.1109/IVNC.2007.4480925
Filename
4480925
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