Analogue/Digital dual power module using ion-implanted GaAs MESFETs

Author

Masato, H. ; Maeda, Munenori ; Fujimoto, Hiroshi ; Morimoto, Shigeo ; Nakamura, Mitsutoshi ; Yoshikawa, Yasuhiro ; Ikeda, Hinata ; Kosugi, H. ; Ota, Yoshiharu

Author_Institution

Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

fYear

1995

fDate

16-20 May 1995

Firstpage

567

Abstract

An analogue and digital dual power module using ion-implanted GaAs MESFETs with high breakdown voltage has been developed for North American Digital Cellular (NADC). In the analogue operation, the module exhibited high power-added efficiency (PAE) of 56.0% at Vdd=3.7 V. In the digital operation, the high efficiency of 46.9% and the low adjacent channel leakage power (Padj) of -29.1 dBc at +30 kHz Padj and of -52.7 dBc at +60 kHz Padj were simultaneously obtained at f=836.5 MHz, Pout=31.0 dBm and Vdd=4.7 V. This device is quite suitable for the dual mode application.<>

Keywords

III-V semiconductors; UHF power amplifiers; cellular radio; electric breakdown; gallium arsenide; ion implantation; land mobile radio; modules; power MESFET; power amplifiers; 3.7 to 4.7 V; 46.9 percent; 56 percent; 836.5 MHz; GaAs:Si; North American Digital Cellular application; UHF amplifier; analogue/digital dual power module; high breakdown voltage; ion-implanted GaAs MESFETs; Annealing; Circuits; Dry etching; FETs; Gallium arsenide; MESFETs; Multichip modules; Power generation; Radio frequency; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406023

Filename

406023