DocumentCode
3210252
Title
Low temperature synthesis of two-dimensional carbon nanosheets as a field electron emission material
Author
Zhu, Mingyao ; Outlaw, R.A. ; Miraldo, Peter ; Kun, Hou ; Manos, Dennis M.
Author_Institution
Coll. of William & Mary, Williamsburg
fYear
2007
fDate
8-12 July 2007
Firstpage
104
Lastpage
105
Abstract
In this abstract we report carbon nanosheet synthesis at substrate temperatures lowered by 100-150 degC when utilizing C2H2, rather than CH4, as a precursor. Typical C2H2 carbon nano-sheets were successfully deposited on silicon substrates at 550-600 degC substrate temperatures, with 80-100% C2H2 in H2 concentrations at a fixed 5 seem total gas flow rate, 30-40 mTorr total gas pressures, and 1000 W input RF power.
Keywords
carbon compounds; carbon nanotubes; electron field emission; low-temperature techniques; silicon; 2D carbon nanosheets; Si; field electron emission material; gas flow rate; low temperature synthesis; temperature 100 C to 150 C; temperature 550 C to 600 C; Atomic layer deposition; Carbon dioxide; Diffraction; Electron emission; Hydrogen; Organic materials; Plasma properties; Plasma temperature; Radio frequency; Scanning electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
Conference_Location
Chicago, IL
Print_ISBN
978-1-4244-1133-7
Electronic_ISBN
978-1-4244-1134-4
Type
conf
DOI
10.1109/IVNC.2007.4480952
Filename
4480952
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