The relationship between field emission characteristics and defects measured by RAMAN scattering in carbon nanotube cathode treated by plasma and laser irradiation

Author

Kim, W.S. ; Kinishita, A. ; Murakami, K. ; Abo, S. ; Wakaya, F. ; Takai, M.

Author_Institution

Osaka Univ., Osaka

fYear

2007

fDate

8-12 July 2007

Firstpage

123

Lastpage

124

Abstract

In this study, the relationship between FE characteristics and defects measured by RAMAN scattering in the MWNT cathodes treated by plasma and laser was investigated. The laser power used in RAMAN scattering was about 0.1 mW with a spot area of 8.8 mum², corresponding to a power density of 1 kW/cm², which did not induce any damage on the MWNT film. This result indicates that the defects such as dangling bonds in CNTs, acting as emission sites, play an important role on the emission characteristics by the surface treatment.

Keywords

Raman spectra; carbon nanotubes; cathodes; electron field emission; laser materials processing; plasma materials processing; surface treatment; vacuum microelectronics; C; CNT; RAMAN scattering; carbon nanotube cathode; dangling bonds; defects measurement; emission sites; field emission characteristics; laser irradiation; laser power; plasma treatment; surface treatment; Carbon nanotubes; Cathodes; Current density; Electrodes; Iron; Plasma density; Plasma displays; Plasma measurements; Plasma properties; Raman scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International

Conference_Location

Chicago, IL

Print_ISBN

978-1-4244-1133-7

Electronic_ISBN

978-1-4244-1134-4

Type

conf

DOI

10.1109/IVNC.2007.4480960

Filename

4480960