DocumentCode
3210459
Title
Novel slurry solutions for thick Cu CMP
Author
Miranda, Peter A. ; Imonigie, Jerome A. ; Erbe, Aaron L. ; Moll, Amy J.
Author_Institution
Dept. of Mater. Sci. & Eng., Boise State Univ., ID
fYear
2005
fDate
15-15 April 2005
Firstpage
92
Lastpage
94
Abstract
Electro-plating methods currently used to deposit Cu in through-wafer interconnect applications result in the formation of a thick Cu layer with large amounts of topographical variation. In this paper, alternative methods for thick Cu removal are investigated using a two step slurry CMP approach
Keywords
chemical mechanical polishing; copper; electroplating; integrated circuit interconnections; slurries; Cu; chemical mechanical planarisation; electroplating method; slurry solutions; thick Cu layer; thick Cu removal; through-wafer interconnect application; topographical variation; two step slurry CMP approach; Copper; Fabrication; Integrated circuit interconnections; Semiconductor device modeling; Silicon; Slurries; Solid modeling; Stacking; Surface topography; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics and Electron Devices, 2005. WMED '05. 2005 IEEE Workshop on
Conference_Location
Boise, ID
Print_ISBN
0-7803-9072-5
Type
conf
DOI
10.1109/WMED.2005.1431630
Filename
1431630
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