Title :
Novel slurry solutions for thick Cu CMP
Author :
Miranda, Peter A. ; Imonigie, Jerome A. ; Erbe, Aaron L. ; Moll, Amy J.
Author_Institution :
Dept. of Mater. Sci. & Eng., Boise State Univ., ID
Abstract :
Electro-plating methods currently used to deposit Cu in through-wafer interconnect applications result in the formation of a thick Cu layer with large amounts of topographical variation. In this paper, alternative methods for thick Cu removal are investigated using a two step slurry CMP approach
Keywords :
chemical mechanical polishing; copper; electroplating; integrated circuit interconnections; slurries; Cu; chemical mechanical planarisation; electroplating method; slurry solutions; thick Cu layer; thick Cu removal; through-wafer interconnect application; topographical variation; two step slurry CMP approach; Copper; Fabrication; Integrated circuit interconnections; Semiconductor device modeling; Silicon; Slurries; Solid modeling; Stacking; Surface topography; Testing;
Conference_Titel :
Microelectronics and Electron Devices, 2005. WMED '05. 2005 IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
0-7803-9072-5
DOI :
10.1109/WMED.2005.1431630
