Effect of high magnetic field on transistor characteristics with applications to SEU testing

Author

Phothimat, Phomma ; Awipi, Mebenin

Author_Institution

Dept. of Electr. & Comput. Eng., Tennessee State Univ., Nashville, TN, USA

fYear

1998

fDate

24-26 Apr 1998

Firstpage

338

Lastpage

339

Abstract

Transistor characteristics are modified by the application of high magnetic fields. These changes are due to Hall effect voltages or magnetoresistance. Translations of device characteristics can be modeled by connecting voltage or current sources in series/parallel with the device. These translations are similar to the effect of ionizing radiation creating a plasma column in the device. This results in deterioration of device performance due to lowered noise margins in digital circuits. Because of the similarities of these effects, the magnetic field can, with some advantages, replace ionizing radiation in simulating single event upset (SEU) testing

Keywords

Hall effect; ULSI; VLSI; integrated circuit noise; integrated circuit testing; magnetic fields; magnetoresistance; Hall effect voltages; SEU testing; device characteristics; device performance; magnetic field effects; magnetoresistance; noise margins; single event upset; transistor characteristics; voltage sources; Hall effect; Ionizing radiation; Joining processes; Magnetic fields; Magnetoresistance; Plasma applications; Plasma devices; Plasma properties; Single event upset; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Southeastcon '98. Proceedings. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4391-3

Type

conf

DOI

10.1109/SECON.1998.673365

Filename

673365