Cellular/PCS dual-band MMIC power amplifier of a newly devised single-input single-chain network

Author

Ki Young Kim ; Ji Hoon Kim ; Youn Sub Noh ; Chul Soon Park

Author_Institution

School of Eng., Information and Communication Univ. (ICU), Korea

fYear

2003

fDate

9-12 Nov. 2003

Firstpage

131

Lastpage

134

Abstract

This paperproposes a novel structure of single-input/chain dual-band power amplifier and reports the InGaP/GaAs hetero-junction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) power amplifier implemented for cellular (850 MHz)/PCS(l750 MHz) dual-band applications. This power amplifer has a single-input port to comply with multiband RF and has a single-chain network to achieve a small chip and module size. In order to reduce quiescent currents for cellular band, the band selecting circuit to control bias current is used to each of drive.andpower stage. The two-stage amplifier has a maximum output power of 30dBm (29dBm) and power-added efficiency (PAE) of 42%(37%) and adiacent channel power ratio(ACPR) of -5ldBc(-48dBc) at the output power of 28dBm(28dBm) under 3.4V operation voltage for cellular (PCS) band.

Keywords

Cellular networks; Circuits; Dual band; Frequency; Impedance matching; MMICs; Personal communication networks; Power amplifiers; Radiofrequency amplifiers; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE

Conference_Location

San Diego, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-7833-4

Type

conf

DOI

10.1109/GAAS.2003.1315280

Filename

1315280