DocumentCode
3210550
Title
Tuning the density of ZnO nanorods and the field emission performance by seed layer in low temperature solution growth
Author
Liu, J. ; She, J.C. ; Deng, S.Z. ; Chen, J. ; Xu, N.S.
Author_Institution
Sun Yat-sen (Zhongshan) Univ., Guangzhou
fYear
2007
fDate
8-12 July 2007
Firstpage
135
Lastpage
136
Abstract
In this work, the low temperature solution method was used to synthesize the ZnO nanorods. Its density can by tuned by simple adjusting the thickness of the seed layer. ZnO seed layers with stepwise increasing thickness were first deposited on the Si substrate by direct current sputtering. Field emission properties of the ZnO nanorods with different density were systematically measured and compared. The corresponding Fowler-Norheim (FN) plots are also given as inset, which shows the linear behavior to all four samples, demonstrated that the current was generated by field electron emission.
Keywords
II-VI semiconductors; electron field emission; nanostructured materials; semiconductor growth; silicon; sputter deposition; wide band gap semiconductors; zinc compounds; Fowler-Norheim plots; Si; ZnO; direct current sputtering; field electron emission; field emission performance; low temperature solution growth; nanorods density; zinc oxide seed layer; Chemical technology; Current density; Flat panel displays; Laboratories; Nanostructured materials; Scanning electron microscopy; Substrates; Sun; Temperature; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
Conference_Location
Chicago, IL
Print_ISBN
978-1-4244-1133-7
Electronic_ISBN
978-1-4244-1134-4
Type
conf
DOI
10.1109/IVNC.2007.4480966
Filename
4480966
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