• DocumentCode
    3210550
  • Title

    Tuning the density of ZnO nanorods and the field emission performance by seed layer in low temperature solution growth

  • Author

    Liu, J. ; She, J.C. ; Deng, S.Z. ; Chen, J. ; Xu, N.S.

  • Author_Institution
    Sun Yat-sen (Zhongshan) Univ., Guangzhou
  • fYear
    2007
  • fDate
    8-12 July 2007
  • Firstpage
    135
  • Lastpage
    136
  • Abstract
    In this work, the low temperature solution method was used to synthesize the ZnO nanorods. Its density can by tuned by simple adjusting the thickness of the seed layer. ZnO seed layers with stepwise increasing thickness were first deposited on the Si substrate by direct current sputtering. Field emission properties of the ZnO nanorods with different density were systematically measured and compared. The corresponding Fowler-Norheim (FN) plots are also given as inset, which shows the linear behavior to all four samples, demonstrated that the current was generated by field electron emission.
  • Keywords
    II-VI semiconductors; electron field emission; nanostructured materials; semiconductor growth; silicon; sputter deposition; wide band gap semiconductors; zinc compounds; Fowler-Norheim plots; Si; ZnO; direct current sputtering; field electron emission; field emission performance; low temperature solution growth; nanorods density; zinc oxide seed layer; Chemical technology; Current density; Flat panel displays; Laboratories; Nanostructured materials; Scanning electron microscopy; Substrates; Sun; Temperature; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
  • Conference_Location
    Chicago, IL
  • Print_ISBN
    978-1-4244-1133-7
  • Electronic_ISBN
    978-1-4244-1134-4
  • Type

    conf

  • DOI
    10.1109/IVNC.2007.4480966
  • Filename
    4480966