• DocumentCode
    3210640
  • Title

    Hot carrier degradation in novel strained-Si nMOSFETs

  • Author

    Lu, M.F. ; Chiang, Sinclair ; Liu, Alex ; Huang-Lu, S. ; Yeh, M.-S. ; Hwang, J.R. ; Tang, T.H. ; Shiau, W.T. ; Chen, M.C. ; Wang, Tahui

  • Author_Institution
    Central Res. & Dev. Div., UMC, Hsin-Chu, Taiwan
  • fYear
    2004
  • fDate
    25-29 April 2004
  • Firstpage
    18
  • Lastpage
    22
  • Abstract
    High Id-sat enhancement is benefited from novel strained-Si process. However, it might cause reliability problems. Here we revealed the HCI degradation of strained-Si devices, which also can be correlated to Ib/Id, were worse than conventional bulk Si devices. Besides, it had high positive temperature coefficient in low voltages. Thus, it would be even worse at the operation voltage.
  • Keywords
    MOSFET; hot carriers; impact ionisation; semiconductor device breakdown; semiconductor device reliability; Si; hot carrier degradation; novel strained-Si nMOSFETs; operation voltage; reliability problems; Degradation; Electrons; Germanium silicon alloys; Hot carriers; Impact ionization; MOSFETs; Photonic band gap; Silicon germanium; Temperature measurement; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
  • Print_ISBN
    0-7803-8315-X
  • Type

    conf

  • DOI
    10.1109/RELPHY.2004.1315295
  • Filename
    1315295
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3210640