• DocumentCode
    3210643
  • Title

    Fabrication and field emission properties of gated field emitter arrays with hafnium nitride cathode

  • Author

    Gotoh, Y. ; Setojima, N. ; Miyata, Y. ; Kanzawa, T. ; Tsuji, H. ; Ishikawa, J.

  • Author_Institution
    Kyoto Univ., Kyoto
  • fYear
    2007
  • fDate
    8-12 July 2007
  • Firstpage
    141
  • Lastpage
    142
  • Abstract
    We fabricated the FEAs of which emitters are covered with HfN films, and showed relatively good electron emission properties including lifetime and operation at the elevated temperatures up to 100degC. The fabricated device showed relatively good electron emission properties. Typically, electron emission started at VEG of about 40 V, and the current of 1 muA was observed at VEG of 60 V. Some of the 2,025-tip FEA yielded a high current of 100 muA at VEG of 120 V.
  • Keywords
    cathodes; field emitter arrays; hafnium compounds; nanoelectronics; HfN; current 1 muA; current 100 muA; electron emission; field emission test; gated field emitter arrays; hafnium nitride cathode; vacuum chamber; vacuum nanoelectronics devices; voltage 120 V; voltage 40 V; voltage 60 V; Cathodes; Fabrication; Field emitter arrays; Hafnium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
  • Conference_Location
    Chicago, IL
  • Print_ISBN
    978-1-4244-1133-7
  • Electronic_ISBN
    978-1-4244-1134-4
  • Type

    conf

  • DOI
    10.1109/IVNC.2007.4480969
  • Filename
    4480969
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3210643