Investigation of optimum junction depth of InSb Infrared Photodiode

Junction depth plays an important role in determining reverse saturation current (I_s) and the quantum efficiency η of a detector. In order to reduce the I_s and increase the η, the thickness of p-type region is made as thin as possible. To evaluate the effect of junction depth on quantum efficiency and reverse saturation current we calculated the efficiency and fabricate InSb PV detector, and the effect of junction depth on performance of this type of detector acquired.