DocumentCode
3211399
Title
SRAM SER in 90, 130 and 180 nm bulk and SOI technologies
Author
Cannon, Ethan H. ; Reinhardt, Daniel D. ; Gordon, Michael S. ; Makowenskyj, Paul S.
Author_Institution
IBM Microeletronics, Essex Junction, VT, USA
fYear
2004
fDate
25-29 April 2004
Firstpage
300
Lastpage
304
Abstract
We investigate the soft error rate (SER) of bulk and SOI SRAMs at the 90, 130 and 180 nm technology nodes. We use accelerated testing and Monte Carlo modeling to determine SER sensitivity to different radiation sources; we can therefore predict the product SER based on the radiation flux. Lifetests performed underground, near sea level, and at 10,000 feet confirm the predicted SER levels.
Keywords
SRAM chips; integrated circuit reliability; radiation hardening (electronics); semiconductor device reliability; silicon-on-insulator; 130 nm; 180 nm; 90 nm; Monte Carlo modeling; SOI technologies; SRAM SER; radiation sources; soft error rate; Alpha particles; Error analysis; Ionizing radiation; Life estimation; Monte Carlo methods; Neutrons; Random access memory; Silicon; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN
0-7803-8315-X
Type
conf
DOI
10.1109/RELPHY.2004.1315341
Filename
1315341
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