Lanthanum monosulfide thin films grown on MgO substrates for field emission

Author

Fairchild, S. ; Grazulis, L. ; Cahay, M. ; Garre, K. ; Poitras, D. ; Wu, X. ; Lockwood, D.J. ; Semet, V. ; Binh, Vu Thien

Author_Institution

Air Force Res. Lab. (AFRL/ML), Cincinnati

fYear

2007

fDate

8-12 July 2007

Firstpage

253

Lastpage

254

Abstract

In this work and with a view to optimizing their FE properties, LaS films of increased crystallinity were obtained by PLD on lattice matched MgO substrates, at elevated substrate temperatures and in a background gas of H₂S. The thin films have been characterized by high resolution transmission electron microscopy, atomic force microscopy (AFM), X-ray diffraction, ellipsometry and Raman spectroscopy. The FE properties of the films have been characterized by scanning anode field emission microscopy.

Keywords

Raman spectra; X-ray diffraction; atomic force microscopy; ellipsometry; field emission; field emission electron microscopy; lanthanum compounds; pulsed laser deposition; thin films; transmission electron microscopy; AFM; LaS; MgO; PLD; Raman spectroscopy; X-ray diffraction; atomic force microscopy; crystallinity; ellipsometry; field emission properties; high-resolution transmission electron microscopy; lanthanum monosulfide thin films; lattice matched substrates; scanning anode field emission microscopy; Atomic force microscopy; Crystallization; Ellipsometry; Iron; Lanthanum; Lattices; Temperature; Transistors; Transmission electron microscopy; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International

Conference_Location

Chicago, IL

Print_ISBN

978-1-4244-1133-7

Electronic_ISBN

978-1-4244-1134-4

Type

conf

DOI

10.1109/IVNC.2007.4481019

Filename

4481019