Local field emission characteristic of individual AIN cone fabricated by focused ion beam

In summary, an individual AlN cone with high aspect ratio was formed by FIB technique. And a nature field emission property of individual AlN cone was measured in a dual probe SEM system. The results indicated that as formed single AlN cone with high aspect ratio exhibits a good field emission ability without any field shielding effect although only has a tiny emission area. Compared with a single Si cone fabricated by the same method, a single AlN cone has a better electron emission ability and hence a good promising candidate of point electron source candidate for the application of vacuum electronic device field.