Title :
A PMOSFET ESD failure caused by localized charge injection
Author :
Chun, Lung-Hoon ; Duvvury, Charvaka ; Boselli, Gianluca ; Kunz, Hans ; Dutton, Robert W.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
A new failure mechanism of PMOSFET devices under ESD conditions is reported and analyzed by investigating various I/O structures. Localized turn-on of the parasitic pnp transistor can be caused by localized charge injection into the body of the PMOSFET. Critical layout parameters affecting this problem are discussed based on 2-D device simulations. A general strategy for avoiding this failure mode is also suggested.
Keywords :
MOSFET; charge injection; electrostatic discharge; failure analysis; semiconductor device breakdown; semiconductor device reliability; I/O structures; PMOSFET ESD failure; critical layout parameters; failure mechanism; localized charge injection; localized turn-on; parasitic pnp transistor; CMOS technology; Circuit testing; Clamps; Electrostatic discharge; Failure analysis; MOS devices; MOSFET circuits; Protection; Rails; Stress;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315360
