Title :
Direct determination of interface and bulk traps in stacked HfO2 dielectrics using charge pumping method
Author :
Hou, T.H. ; Wang, M.F. ; Mai, K.-L. ; Lin, Y.M. ; Yang, M.H. ; Yao, L.G. ; Jin, Y. ; Chen, C. ; Liang, M.S.
Author_Institution :
Adv. Module Technol. Div., Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan
Abstract :
For the first time, trap density at SiO2/Si interface, HfO2/SiO2 interface, and HfO2 bulk of stacked HfO2/SiO2 dielectrics are quantified respectively with a simple charge pumping method. It was found that the amount of each individual type of traps can be well correlated to specific process conditions as well as device performance, which makes such innovative characterization method very powerful for process optimization of high-k dielectrics.
Keywords :
dielectric thin films; electric breakdown; hafnium compounds; permittivity; semiconductor device breakdown; semiconductor device reliability; semiconductor-insulator boundaries; silicon; silicon compounds; HfO2-SiO2; HfO2/SiO2 interface; SiO2-Si; SiO2/Si interface; bulk traps; charge pumping method; interface traps; stacked HfO2 dielectrics; Charge pumps; Electron mobility; Electron traps; Frequency measurement; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOS devices; Niobium; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315399
