Title :
Influence of charge trapping on AC reliability of high-k dielectrics
Author :
Kerber, M. ; Duschl, R. ; Reisinger, H. ; Jakschik, S. ; Schröder, U. ; Hecht, T. ; Kudelka, S.
Author_Institution :
Infineon Technol., Munich, Germany
Abstract :
The lifetime of Al2O3 dielectrics in trench DRAM capacitors is investigated under bipolar AC stress. Other than generally expected from literature a frequency dependent lifetime reduction together with lower voltage acceleration and steeper Weibull distributions are found. This is attributed to the trapping characteristics of Al2O3 high-k dielectrics.
Keywords :
DRAM chips; alumina; capacitors; dielectric thin films; integrated circuit reliability; permittivity; semiconductor device breakdown; semiconductor device reliability; AC reliability; Al2O3; Al2O3 dielectrics; charge trapping; frequency dependent lifetime reduction; high-k dielectrics; lower voltage acceleration; steeper Weibull distributions; trench DRAM capacitors; Acceleration; Capacitors; Electric breakdown; Frequency dependence; High-K gate dielectrics; Integrated circuit reliability; Random access memory; Silicon; Stress; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315401
