DocumentCode
3213192
Title
Soft breakdown effects on MOS switch and passive mixer
Author
Sadat, Anwar ; Liu, Yi ; Yuan, Jiann ; Xie, Huikai
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA
fYear
2004
fDate
25-29 April 2004
Firstpage
653
Lastpage
654
Abstract
On wafer 0.16 μm NMOS transistors are stressed and measured. Soft breakdown effects on MOS switch and passive mixer are evaluated. Time constant for the switch increases. Conversion gain and LO feed-through of the mixer degraded.
Keywords
capacitor switching; dielectric thin films; electric breakdown; field effect transistor switches; mixers (circuits); semiconductor device breakdown; semiconductor device reliability; 0.16 micron; MOS switch; passive mixer; soft breakdown effects; time constant; Breakdown voltage; Capacitance; Degradation; Electric breakdown; Electrical resistance measurement; MOSFETs; Mixers; Stress measurement; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN
0-7803-8315-X
Type
conf
DOI
10.1109/RELPHY.2004.1315435
Filename
1315435
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