• DocumentCode
    3213743
  • Title

    A novel nanoscale tunnel FET structure for increasing on/off current ratio

  • Author

    Vadizadeh, Mahdi ; Fathipour, Morteza ; Amid, Arash

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Univ. of Tehran, Tehran, Iran
  • fYear
    2008
  • fDate
    14-17 Dec. 2008
  • Firstpage
    300
  • Lastpage
    303
  • Abstract
    In this paper, we have shown that off-state current in the tunneling field effect transistor (TFET) can be reduced dramatically by using an ¿asymmetric¿ gate oxide thickness and employing gate work function engineering. This procedure does not affect driving current while reduces Ioff by 5 orders magnitude, hence obtained the noticeable of Ion/Ioff ratio. We discuss optimization of Ion/Ioff ratio and investigate the effect of scaling on the Ion/Ioff ratio in the proposed structure.
  • Keywords
    MOSFET; optimisation; work function; asymmetric gate oxide thickness; gate work function engineering; nanoscale tunnel FET structure; on/off current ratio; optimization; FETs; Microelectronics; Nanostructures; Band To Band Tunneling (BTBT); Tunneling leakage current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2008. ICM 2008. International Conference on
  • Conference_Location
    Sharjah
  • Print_ISBN
    978-1-4244-2369-9
  • Electronic_ISBN
    978-1-4244-2370-5
  • Type

    conf

  • DOI
    10.1109/ICM.2008.5393516
  • Filename
    5393516
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3213743