Title :
An intelligent power module for IGBT gate driver implemented in 0.8 μm high voltage CMOS process
Author :
Kim, E.D. ; Kim, N.K. ; Kim, S.C. ; Bahng, W. ; Song, G.H. ; Han, S.B.
Author_Institution :
Korea Electrotechnol. Res. Inst., Changwon, South Korea
Abstract :
In this paper, we design and implement a monolithic IGBT gate driver for intelligent power modules (IPMs) in a high voltage (50 V) 0.8 μm CMOS process. The efficient and various protection functions are included in the IGBT gate driver. The gate driver is designed for medium power applications, such as home appliances. It includes low voltage logic, 5 V logic regulator, analog control circuitry, high voltage (50 V) high current output drivers, and protection circuitry
Keywords :
CMOS integrated circuits; driver circuits; insulated gate bipolar transistors; modules; monolithic integrated circuits; protection; 0.8 mum; 5 V; 50 V; IGBT gate driver; analog control circuitry; gate driver IC design; high voltage CMOS process; high voltage high current output drivers; home appliances; intelligent power module; logic regulator; low voltage logic; medium power applications; monolithic IGBT gate driver; protection functions; CMOS logic circuits; CMOS process; Driver circuits; Home appliances; Insulated gate bipolar transistors; Logic circuits; Low voltage; Multichip modules; Protection; Regulators;
Conference_Titel :
Industrial Electronics, 2001. Proceedings. ISIE 2001. IEEE International Symposium on
Conference_Location :
Pusan
Print_ISBN :
0-7803-7090-2
DOI :
10.1109/ISIE.2001.931875
