DocumentCode
3217162
Title
Micro IDDQ test using Lorentz force MOSFETs
Author
Nose, K. ; Sakurai, T.
Author_Institution
Inst. of Ind. Sci., Tokyo Univ., Japan
fYear
1999
fDate
17-19 June 1999
Firstpage
169
Lastpage
170
Abstract
A non-disturbing and non-contacting current sensing device, namely LMOS, is proposed and experimentally shown to be effective. The LMOS enables a micro IDDQ test where the current of thousands of small circuit blocks on a chip in identifying the points of design errors and/or small margin. The scheme is helpful and this scheme can become an important debugging tool for the future complex VLSIs that achieve low standby and operation current.
Keywords
CMOS integrated circuits; VLSI; electric current measurement; electric sensing devices; integrated circuit design; integrated circuit testing; Lorentz force MOSFETs; circuit blocks; complex VLSIs; debugging tool; design errors; micro IDDQ test; noncontacting current sensing device; nondisturbing current sensing device; operation current; standby; CMOS technology; Circuit testing; Current measurement; Leakage current; Lorentz covariance; MOSFET circuits; Magnetic fields; Power measurement; Power supplies; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Circuits, 1999. Digest of Technical Papers. 1999 Symposium on
Conference_Location
Kyoto, Japan
Print_ISBN
4-930813-95-6
Type
conf
DOI
10.1109/VLSIC.1999.797273
Filename
797273
Link To Document