Analysis and modeling of avalanche photodiode using transfer matrix method

In this paper, In_0.53Ga_0.47As/InP avalanche photodiode (APD) gain is calculated based on the device mechanism and carrier rate equations, using transfer matrix method (TMM). In fact, a distributed model is presented for calculating impact ionization and relates different sections of the multiplication region. In proposed model, recessive equations are used and device gain is considered proportional to the number of output photo-electrons and photo-holes. Comparison of simulation results with experimental data available in literature has demonstrated the capability of the new developed model as a powerful tool to simulate the APDs´ behavior and to interpret their experimentally measured characteristics.