Non-inductive impedance transformer

Author

Subhani, Khaja F. ; DiBitonto, D. ; Pennington, T. ; Baier, Steven ; Stronczer, John

Author_Institution

Alabama Univ., Tuscaloosa, AL, USA

fYear

1993

fDate

7-9 Mar 1993

Firstpage

155

Lastpage

158

Abstract

An innovative design for a noninductive transformer circuit that transforms values of impedance less than 1 Ω to very high values of approximately several kΩ is based on GaAs CHIGFET technology, with intrinsic radiation hardness in excess of several hundred megarads. A principal advantage of the circuit is that the speed and bandwidth sensitivity is weakly affected by detector source capacity (up to 1 nF), thereby allowing greater design flexibility for both hadronic and electromagnetic calorimetry, or even charge particle detection (tracking) integrated within the same device. The simulated risetime is less than 2 ns, and power dissipated is less than 40 mW

Keywords

CMOS analogue integrated circuits; CMOS integrated circuits; III-V semiconductors; VLSI; calorimetry; gallium arsenide; impedance convertors; integrated circuit modelling; particle detectors; preamplifiers; radiation hardening (electronics); CHIGFET technology; GaAs complementary heteroinsulated gate field effect transistor; charge particle detection; design flexibility; electromagnetic calorimetry; hadronic calorimetry; intrinsic radiation hardness; noninductive impedance transformer; Bandwidth; Calorimetry; Circuit simulation; Detectors; Electromagnetic devices; Electromagnetic radiation; Flexible printed circuits; Gallium arsenide; Impedance; Particle tracking;

fLanguage

English

Publisher

ieee

Conference_Titel

System Theory, 1993. Proceedings SSST '93., Twenty-Fifth Southeastern Symposium on

Conference_Location

Tuscaloosa, AL

ISSN

0094-2898

Print_ISBN

0-8186-3560-6

Type

conf

DOI

10.1109/SSST.1993.522761

Filename

522761