DocumentCode
3218653
Title
Research of NEA GaN photocathode performance parameters on the effect of quantum efficiency
Author
Yujie Du ; Benkang Chang ; Xiaoqian Fu ; Biao Li ; Junju Zhang
Author_Institution
Inst. of Electron. Eng. & Opto-Electr. Technol., NJUST, Nanjing, China
fYear
2010
fDate
14-16 Oct. 2010
Firstpage
317
Lastpage
318
Abstract
Research of negative electron affinity GaN ultraviolet photocathode performance parameters on the effect of quantum efficiency is reported. Electronic surface escaping probability is one of the important parameters in comprehensive measure the level of the preparation of GaN optoelectronic cathode.
Keywords
III-V semiconductors; electron emission; gallium compounds; photocathodes; photodetectors; ultraviolet detectors; wide band gap semiconductors; GaN; electronic surface emission; negative electron affinity; quantum efficiency; ultraviolet optoelectronic photocathode; ultraviolet signal detector; Gallium nitride;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location
Nanjing
Print_ISBN
978-1-4244-6645-0
Type
conf
DOI
10.1109/IVESC.2010.5644324
Filename
5644324
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