DocumentCode
3219128
Title
Carbon nanotube transistor: Doping and ambipolarity
Author
Young Hee Lee
Author_Institution
Dept. of Phys., Sungkyunkwan Univ., Suwon, South Korea
fYear
2010
fDate
14-16 Oct. 2010
Firstpage
10
Lastpage
10
Abstract
Pure carbon nanotubes have been known to exhibit ambipolarity. This is very different from the conventional semiconductors that are controlled by an intentional doping with extrinsic materials. The ambipolarity has been a serious drawback in adopting carbon nanotubes for CMOS technology. Carbon nanotubes show p-type behavior in ambient conditions. The difficulty arises from the absence of stable n-type dopants in ambient conditions. A series of chemical approaches have been done in our group to search for n-type dopants. NADH and viologen molecules have demonstrated successfully to show n-type behavior by donating electrons to nanotubesand furthermore show high stability in ambient conditions.[1-5] In addition to these approaches, we will also demonstrate a way of utilizing ambipolarity of nanotuibes without such intentional dopings that ambipolarity is in fact advantageous in fabricating CMOS inverter and logic circuits.
Keywords
carbon nanotubes; nanotube devices; semiconductor devices; semiconductor doping; semiconductor nanotubes; transistors; C; CMOS technology; NADH; ambipolarity; carbon nanotube transistor; doping; n-type dopants; p-type behavior; viologen molecules;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location
Nanjing
Print_ISBN
978-1-4244-6645-0
Type
conf
DOI
10.1109/IVESC.2010.5644345
Filename
5644345
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