• DocumentCode
    3219128
  • Title

    Carbon nanotube transistor: Doping and ambipolarity

  • Author

    Young Hee Lee

  • Author_Institution
    Dept. of Phys., Sungkyunkwan Univ., Suwon, South Korea
  • fYear
    2010
  • fDate
    14-16 Oct. 2010
  • Firstpage
    10
  • Lastpage
    10
  • Abstract
    Pure carbon nanotubes have been known to exhibit ambipolarity. This is very different from the conventional semiconductors that are controlled by an intentional doping with extrinsic materials. The ambipolarity has been a serious drawback in adopting carbon nanotubes for CMOS technology. Carbon nanotubes show p-type behavior in ambient conditions. The difficulty arises from the absence of stable n-type dopants in ambient conditions. A series of chemical approaches have been done in our group to search for n-type dopants. NADH and viologen molecules have demonstrated successfully to show n-type behavior by donating electrons to nanotubesand furthermore show high stability in ambient conditions.[1-5] In addition to these approaches, we will also demonstrate a way of utilizing ambipolarity of nanotuibes without such intentional dopings that ambipolarity is in fact advantageous in fabricating CMOS inverter and logic circuits.
  • Keywords
    carbon nanotubes; nanotube devices; semiconductor devices; semiconductor doping; semiconductor nanotubes; transistors; C; CMOS technology; NADH; ambipolarity; carbon nanotube transistor; doping; n-type dopants; p-type behavior; viologen molecules;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
  • Conference_Location
    Nanjing
  • Print_ISBN
    978-1-4244-6645-0
  • Type

    conf

  • DOI
    10.1109/IVESC.2010.5644345
  • Filename
    5644345