Graphene synthesis by carbon ion implantation in transition metals films

In this work, we will present a novel graphene synthesis technique, based on the ion implantation of carbon ions into polycrystalline transition metal thin films. Ion implantation is now a routine process developed by the semiconductor industry over the past three decades. It is used to dope the source and drain contact regions as well as to adjust the channel characteristics of CMOS transistors. One of the advantages of ion implantation is that it allows one to precisely control the carbon dose introduced in a particular substrate.