Generation of CW THz radiation by optical heterodyne with diode lasers and LTG-GaAs photoconductors

Author

Matsuura, S. ; Tani, M. ; Sakai, K.

Author_Institution

Commun. Res. Lab., Kansai Adv. Res. Center, Iwaoka, Japan

fYear

1996

fDate

5-5 Dec. 1996

Firstpage

13

Lastpage

16

Abstract

The absolute power and the spectral profile of the CW THz radiation generated by optical heterodyne with diode lasers and LTG-GaAs photoconductors is discussed. An output radiation of l-nW order and a linewidth of 30 MHz were obtained. These values can be easily improved by employing current techniques for stabilizing diode lasers and by the fabrication of high-photoconductivity devices.

Keywords

III-V semiconductors; dipole antennas; gallium arsenide; infrared sources; optical modulation; photoconducting devices; semiconductor lasers; 1.4 THz; CW THz radiation generation; GaAs; LTG photoconductors; absolute power; diode lasers; high-photoconductivity devices; linewidth; optical heterodyne; output radiation; spectral profile; Antenna measurements; Diode lasers; Dipole antennas; Extraterrestrial measurements; Frequency; Gallium arsenide; Optical mixing; Optical sensors; Photoconductivity; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 1996. MWP '96. Technical Digest., 1996 Internatonal Topical Meeting on

Conference_Location

Kyoto, Japan

Print_ISBN

0-7803-3129-X

Type

conf

DOI

10.1109/MWP.1996.662055

Filename

662055