Carbon based high performance doping-free nanoelectronic and optoelectronic devices

Summary form only given. Ballistic n-type carbon nanotube (CNT) based field-effect transistors (FETs) have been fabricated by contacting semiconducting single wall CNTs using Sc. Together with the demonstrated ballistic p-type CNT FETs using Pd contacts, this closes the gap for doping free fabrication of CNT based ballistic CMOS and high performance optoelectronic devices. The feasibility of this doping free CMOS technology has been demonstrated by fabricating a simple CMOS inverter on a SiO₂/Si substrate, but in principle much more complicated CMOS circuits may be integrated on a CNT on any suitable insulator substrate. This CNT based CMOS technology only requires the patterning of arrays of parallel semiconducting CNTs with moderately narrow diameter range, e.g. 1.6-2.4nm, instead of the more stringent chirality control on the CNT. This may lead to the integration of CNT based CMOS devices or entire carbon based circuit with increasing complexity and possibly find its way into many possible applications, including logic and optoelectronic circuits.