• DocumentCode
    321983
  • Title

    Subband-resonance oscillations in photoexcited GaAs-AlAs type-II superlattices

  • Author

    Mimura, H. ; Hosoda, M. ; Ohtani, N. ; Grahn, H.T. ; Yokoo, K.

  • Author_Institution
    Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
  • fYear
    1996
  • fDate
    5-5 Dec. 1996
  • Firstpage
    137
  • Lastpage
    140
  • Abstract
    Subband-resonance oscillations have been observed in photoexcited, undoped type-II GaAsAlAs superlattices. The frequency can be tuned over a wide range either by the applied voltage or the photoexcited carrier density. The oscillations are due to an oscillating domain boundary between two electric-field domains.
  • Keywords
    III-V semiconductors; aluminium compounds; carrier density; current fluctuations; gallium arsenide; photoconductivity; semiconductor superlattices; space-charge-limited conduction; GaAs-AlAs; electric-field domains; oscillating domain boundary; photoexcited carrier density; photoexcited type-II superlattices; subband-resonance oscillations; Adaptive optics; Charge carrier density; Frequency; Optical superlattices; Photoconductivity; Radiative recombination; Resonance; Semiconductor superlattices; Tuning; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Photonics, 1996. MWP '96. Technical Digest., 1996 Internatonal Topical Meeting on
  • Conference_Location
    Kyoto, Japan
  • Print_ISBN
    0-7803-3129-X
  • Type

    conf

  • DOI
    10.1109/MWP.1996.662087
  • Filename
    662087
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=321983