• DocumentCode
    3220184
  • Title

    Low voltage highly linear tunable BiCMOS OTA using parasitic vertical bipolar transistor in CMOS technology

  • Author

    Hamed, Hesham F A

  • Author_Institution
    Electr. Eng. Depart., El-Minia Univ., El-Minia, Egypt
  • fYear
    2008
  • fDate
    14-17 Dec. 2008
  • Firstpage
    260
  • Lastpage
    263
  • Abstract
    A low distortion low voltage BiCMOS tunable OTA with a very wide transconductance (gm) adjustment , and a wide input range is presented. Input transconductance transistors operate in triode region. The main feature of the proposed BiCMOS OTA are, it can operate at low voltage single supply 1.8 V, gm tuned linearly with a tunable voltage for a wide range (0 V to 1 V). Total harmonic distortion (THD) is less than -43 dB for input voltage 0.8 Vpp and frequency 50 KHz, and the OTA can be implemented in BiCMOS technology or standard CMOS technology using a vertical bipolar transistor. The OTA simulated using PSPICE program and 0.18 ¿m CMOS technology.
  • Keywords
    BiCMOS analogue integrated circuits; CMOS analogue integrated circuits; SPICE; bipolar transistors; circuit tuning; low-power electronics; operational amplifiers; BiCMOS technology; CMOS technology; PSPICE program; frequency 50 kHz; input transconductance transistors; low voltage highly linear tunable BiCMOS OTA; low voltage single supply; operational transconductance amplifiers; parasitic vertical bipolar transistor; size 0.18 mum; standard CMOS technology; total harmonic distortion; triode region; tunable voltage; voltage 0 V to 1 V; voltage 1.8 V; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Harmonic distortion; Linearity; Low voltage; MOSFET circuits; Microelectronics; Transconductance; Virtual colonoscopy; BiCMOS Circuits; Low Voltage Analog circuits; Parasitic Vertical BJT; Tunable OTAs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2008. ICM 2008. International Conference on
  • Conference_Location
    Sharjah
  • Print_ISBN
    978-1-4244-2369-9
  • Electronic_ISBN
    978-1-4244-2370-5
  • Type

    conf

  • DOI
    10.1109/ICM.2008.5393853
  • Filename
    5393853