Title :
Effects of PS morphology on ballistic electron emission
Author :
Zhang Yujuan ; Zhang Xiaoning ; Wang Wenjiang ; Liu Chunliang
Author_Institution :
Key Lab. of Phys. Electron. & Devices of Minist. of Educ., Xi´an Jiaotong Univ., Xi´an, China
Abstract :
In this paper, effects of porous silicon morphology on ballistic electron emission is studied by SEM at different anodization current density.
Keywords :
anodisation; ballistic transport; current density; elemental semiconductors; field emission electron microscopy; porous semiconductors; scanning electron microscopy; silicon; SEM; Si; anodization current density; ballistic electron emission; porous silicon morphology;
Conference_Titel :
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6645-0
DOI :
10.1109/IVESC.2010.5644402
