High voltage GaAs rectifiers for high frequency, high power density switching applications

Author

Hadizad, P. ; Ommen, J. ; Salih, A. ; Varadarajan, S. ; Slocumb, R. ; Robles, E. ; Wolk, M. ; Thero, C.

Author_Institution

Power Products Div., Motorola Inc., Phoenix, AZ, USA

fYear

1996

fDate

25-27 Jun 1996

Firstpage

35

Lastpage

38

Abstract

The development and reliability studies of high voltage, high efficiency GaAs Merged p-n/Schottky (MPS) rectifiers are reported. These devices exhibit extremely low switching losses, along with DC breakdown voltage of 500-1000 V, and average rectified forward current of 8-10 A, at on-state voltage of -2 volts. The rated DC avalanche breakdown voltage is >90% of the ideal (theoretical) value. Results on the optimization of the device performance using two dimensional device simulations (TMA MEDICI) and Design of Experiments (DOE) methodology are reviewed. Implementation of these devices in high frequency switching systems are also discussed

Keywords

III-V semiconductors; Schottky diodes; avalanche breakdown; gallium arsenide; losses; power semiconductor diodes; power semiconductor switches; rectifiers; switched mode power supplies; 500 to 1000 V; 8 to 10 A; DC breakdown voltage; Design of Experiments; GaAs; Merged p-n/Schottky rectifiers; TMA MEDICI; average rectified forward current; dimensional device simulations; high frequency; high frequency switching systems; high power density switching; high voltage GaAs rectifiers; low switching losses; on-state voltage; rated DC avalanche breakdown voltage; Avalanche breakdown; Breakdown voltage; Design optimization; Frequency; Gallium arsenide; Medical simulation; Rectifiers; Switching loss; Switching systems; US Department of Energy;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Modulator Symposium, 1996., Twenty-Second International

Conference_Location

Boca Raton, FL

Print_ISBN

0-7803-3076-5

Type

conf

DOI

10.1109/MODSYM.1996.564443

Filename

564443